چاپ صفحه |  صفحه نخست سامانه |  چکیده مقاله |  نویسندگان |  دانلود مقاله | دانشگاه علوم پزشکی تبریز |
| Background. The aim of the current study was to evaluate implant surface changes following radiation with diode laser beams at various energy levels. Methods. Twenty implants (Dentis, Korea) were irradiated with diode laser, and two implants were considered as controls. The samples were irradiated at energies of 1.5, 2.5, 3.5, 4.5, 5.5 W for 5 and 10 seconds. Then surface implant changes were evaluated using Scanning Electron Microscopy (SEM). Results. At irradiation with laser beam energies of 1.5, 2.5, 3.5 W, there were no significant morphologic changes and any melting on implants and the surfaces in SEM analyses were similar to the control group surfaces. However, irradiation with 4.5 and 5.5 W for 5 and 10 seconds resulted in surface changes. In particular, after irradiation with 5.5-W diode laser beams for 10 seconds, extensive melting was visible. Conclusion. The results of the current study showed that diode laser beams up to 3.5 W did not damage implant surfaces; therefore, they might be useful for treatment of peri-implantitis. |
| نویسنده | نفر چندم مقاله |
|---|---|
| معصومه فرامرزی | اول |
| مهرنوش صدیقی شمامی | دوم |
| نام فایل | تاریخ درج فایل | اندازه فایل | دانلود |
|---|---|---|---|
| japid-10-85.pdf | 1398/02/18 | 1058354 | دانلود |
