اندازه گیری توزیع دز میدان های کوچک در حضور ناهمگنی با استفاده از ژل پلیمر NIPAM و مقایسه آن با شبیه سازی مونت کارلو

مجریان: علیرضا فرج الهی , اصغر مصباحی

خلاصه روش اجرا: Fourteen versions of different approximations on the basis of the many-hit model (MHM) of etching that proposed by Ditlov (Ditlov, 2005) have been used to calculate the bulk etch rate for three different detectors. The reliability of the model in describing the etching processes and to determine possible physical based parameters was determined. Minimizing the least square deviation between experimental and calculated bulk etch rate enable to calculate the registration parameters of the calculated bulk etch rate of CR-39, DAM-ADC and LR-115 SSNTDs that were etched in different etching conditions. The non-linear fit between experimental bulks etch rate and the different formulae were iteratively obtained. Multi-hit model shows its ability to assign specific adjusting parameters for each detector under investigation. Parameters that can be used to distinguish between detectors such as number of hits, ν the normalized value, B activation energy of etching, ε characteristic concentration, and sensitive microscopic volume, SMV diameter were determined. Reasonable number of adjusting parameters for each detector were deduced and statistically compared. Each detector now has, for the first time, its own set of MHM adjusting parameters for standard etching conditions (T, C).